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| Zowie Technology Corporation High Voltage Transistors Lead free product FEATURE We declare that the material of product compliance with RoHS requirements. 3 3 COLLECTOR MMBT5550G MMBT5551G 1 1 2 BASE SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO Value 140 160 6.0 600 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 C) ( V CB = 120Vdc, I E = 0, T A=100 C) Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. REV. 0 V (BR)CEO MMBT5550G MMBT5551G V (BR)CBO MMBT5550G MMBT5551G V MMBT5550G MMBT5551G MMBT5550G MMBT5551G I EBO (BR)EBO 140 160 160 180 6.0 -- -- -- -- -- -- -- -- -- -- 100 50 100 50 50 Vdc Vdc Vdc nAdc Adc I CBO nAdc Zowie Technology Corporation Zowie Technology Corporation ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT5550G MMBT5551G MMBT5550G MMBT5551G MMBT5550G MMBT5551G VCE(sat) Both Types MMBT5550G MMBT5551G V Both Types MMBT5550G MMBT5551G BE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 5.0 Vdc) (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 50 mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc ) Base-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) 60 80 60 80 20 30 -- -- 250 250 -- -- Vdc -- -- -- -- -- -- 0.15 0.25 0.20 Vdc 1.0 1.2 1.0 REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT5550G MMBT5551G h FE, DC CURRENT GAIN (NORMALIZED) 500 300 200 T J = +125C +25C V CE = 1.0 V V CE = 5.0 V 100 -55C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 T J = 25C 0.8 I C = 1.0 mA 0.6 10 mA 30 mA 100 mA 0.4 0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 1 1.0 V CE = 30 V 10 0 T J = 25C 0.8 I C, COLLECTOR CURRENT (A) 10 -1 T J = 125C I C= I 75C REVERSE 25C FORWARD CES V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 10 0.6 10 -2 0.4 10 -3 10 -4 0.2 V CE(sat) @ I C /I B = 10 10 -5 0 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 -0.4 -0.3 V BE , BASE-EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut-Off Region Figure 4. "On" Voltages REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT5550G MMBT5551G , TEMPERATURE COEFFICIENT (mV/C) 2.5 2 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 t r , t f <10 ns DUTY CYCLE = 1.0% 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 Values Shown are for I C @ 10 mA 10 ms 0.25 mF 10.2 V T J = -55C to +135C VC for V CE(sat) V in V BB -8.8 V 100 RB V CC 3.0 k 30 V RC VB for V BE(sat) INPUT PULSE 5.1 k V in 100 1N914 V out V I C , COLLECTOR CURRENT (mA) Figure 5. Temperature Coefficients Figure 6. Switching Time Test Circuit 100 70 50 30 1000 T J = 25C 500 300 200 I C /I B = 10 T J = 25C t r @ V CC = 120 V t r @ V CC = 30 V C, CAPACITANCE (pF) 20 10 7.0 5.0 3.0 2.0 1.0 0.2 t, TIME (ns) C ibo 100 50 30 20 10 t d @ V EB(off) = 1.0 V V CC = 120 V C obo 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn-On Time 5000 t f @ V CC = 120 V 3000 2000 I C /I B = 10 T J = 25C t f @ V CC = 30 V 1000 500 300 200 t, TIME (ns) t s @ V CC = 120 V 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn-Off Time REV. 0 Zowie Technology Corporation |
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